Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | HEXFET® |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 1.9MOhm |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G6 |
Number of Elements | 1 |
Power Dissipation-Max | 380W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 380W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.9m Ω @ 180A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 11270pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 240A Tc |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 4.5V |
Rise Time | 540ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 170 ns |
Continuous Drain Current (ID) | 240A |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 1000A |
Avalanche Energy Rating (Eas) | 300 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |