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IRLS4030TRL7PP

MOSFET N-CH 100V 190A D2PAK-7


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLS4030TRL7PP
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Datasheet: PDF
  • Stock: 707
  • Description: MOSFET N-CH 100V 190A D2PAK-7 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 370W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 370W
Case Connection DRAIN
Turn On Delay Time 53 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11490pF @ 50V
Current - Continuous Drain (Id) @ 25°C 190A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Polarity/Channel Type P-CHANNEL
Fall Time (Typ) 87 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 190A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0039Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 320 mJ
Nominal Vgs 1 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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