Parameters | |
---|---|
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 9.8A |
Number of Elements | 1 |
Power Dissipation-Max | 40W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 40W |
Case Connection | ISOLATED |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 180m Ω @ 4.9A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1705pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 9.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 5V |
Rise Time | 8ns |
Factory Lead Time | 1 Week |
Drive Voltage (Max Rds On,Min Rds On) | 5V |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 46 ns |
Continuous Drain Current (ID) | 9.8A |
Mount | Through Hole |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 200V |
Avalanche Energy Rating (Eas) | 64 mJ |
Mounting Type | Through Hole |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Weight | 2.27g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |