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IRLTS6342TRPBF

MOSFET N-CH 30V 8.3A 6TSOP


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLTS6342TRPBF
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 833
  • Description: MOSFET N-CH 30V 8.3A 6TSOP (Kg)

Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 8.3A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 8.3A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Recovery Time 20 ns
Nominal Vgs -400 mV
Height 1.3mm
Length 3mm
Width 1.75mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 17.5MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2W Ta
See Relate Datesheet

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