Parameters | |
---|---|
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 5.4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 17.5m Ω @ 8.3A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 10μA |
Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 8.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Rise Time | 11ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 8.3A |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 30V |
Recovery Time | 20 ns |
Nominal Vgs | -400 mV |
Height | 1.3mm |
Length | 3mm |
Width | 1.75mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 17.5MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Power Dissipation-Max | 2W Ta |