Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Supplier Device Package | TO-251AA |
Weight | 329.988449mg |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 200mOhm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 7.7A |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta 25W Tc |
Element Configuration | Single |
Power Dissipation | 2.5W |
Turn On Delay Time | 9.3 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 7.7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 5V |
Rise Time | 110ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 26 ns |
Turn-Off Delay Time | 17 ns |
Continuous Drain Current (ID) | 7.7A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 10V |
Drain to Source Breakdown Voltage | 60V |
Input Capacitance | 400pF |
Drain to Source Resistance | 200mOhm |
Rds On Max | 200 mΩ |
Height | 6.22mm |
Length | 6.73mm |
Width | 2.39mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |