Parameters |
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
Subcategory |
FET General Purpose Power |
Voltage - Rated DC |
55V |
Technology |
MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
42A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Number of Elements |
1 |
Power Dissipation-Max |
110W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
110W |
Case Connection |
DRAIN |
Turn On Delay Time |
14 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
13.5m Ω @ 36A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1570pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
42A Tc |
Gate Charge (Qg) (Max) @ Vgs |
35nC @ 5V |
Rise Time |
130ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
33 ns |
Turn-Off Delay Time |
24 ns |
Reverse Recovery Time |
22 ns |
Continuous Drain Current (ID) |
60A |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
16V |
Drain to Source Breakdown Voltage |
55V |
Pulsed Drain Current-Max (IDM) |
240A |
Dual Supply Voltage |
55V |
Avalanche Energy Rating (Eas) |
85 mJ |
Height |
6.22mm |
Length |
6.7056mm |
Width |
2.3876mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Factory Lead Time |
1 Week |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2006 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |