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IRLU3103PBF

MOSFET N-CH 30V 55A I-PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLU3103PBF
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 885
  • Description: MOSFET N-CH 30V 55A I-PAK (Kg)

Details

Tags

Parameters
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 240 mJ
Recovery Time 120 ns
Nominal Vgs 1 V
Height 6.22mm
Length 6.7056mm
Width 2.3876mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 19mOhm
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 55A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 107W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 210ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 55A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 20A
See Relate Datesheet

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