Parameters | |
---|---|
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 220A |
Dual Supply Voltage | 30V |
Avalanche Energy Rating (Eas) | 240 mJ |
Recovery Time | 120 ns |
Nominal Vgs | 1 V |
Height | 6.22mm |
Length | 6.7056mm |
Width | 2.3876mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 19mOhm |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 55A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 107W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 69W |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 19m Ω @ 33A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 55A Tc |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
Rise Time | 210ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 54 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 55A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 20A |