Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2009 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Power Dissipation-Max | 143W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 143W |
Case Connection | DRAIN |
Turn On Delay Time | 45 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6.8m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3779pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 50A Tc |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 4.5V |
Rise Time | 216ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 96 ns |
Turn-Off Delay Time | 43 ns |
Continuous Drain Current (ID) | 99A |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 60V |
Nominal Vgs | 2.5 V |
Height | 6.223mm |
Length | 6.7056mm |
Width | 2.3876mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |