Parameters | |
---|---|
Fall Time (Typ) | 70 ns |
Factory Lead Time | 1 Week |
Turn-Off Delay Time | 33 ns |
Mount | Through Hole |
Continuous Drain Current (ID) | 42A |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Gate to Source Voltage (Vgs) | 16V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Drain Current-Max (Abs) (ID) | 89A |
Published | 2004 |
Drain to Source Breakdown Voltage | 55V |
Series | HEXFET® |
JESD-609 Code | e3 |
Height | 6.223mm |
Part Status | Obsolete |
Length | 6.7056mm |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Width | 2.3876mm |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Radiation Hardening | No |
Resistance | 8MOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
RoHS Status | RoHS Compliant |
Technology | MOSFET (Metal Oxide) |
Lead Free | Lead Free |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 42A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Power Dissipation-Max | 130W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 130W |
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8m Ω @ 42A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 42A Tc |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 5V |
Rise Time | 150ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±16V |