Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Max Operating Temperature | 175°C |
Min Operating Temperature | -40°C |
Voltage - Rated DC | -55V |
Max Power Dissipation | 79W |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -20A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 79W |
Case Connection | DRAIN |
Turn On Delay Time | 9.5 ns |
FET Type | P-Channel |
Transistor Application | AMPLIFIER |
Rds On (Max) @ Id, Vgs | 105m Ω @ 3.4A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Rise Time | 24ns |
Drain to Source Voltage (Vdss) | 55V |
Fall Time (Typ) | 9.5 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | -20A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 60A |
Height | 6.22mm |
Length | 6.7056mm |
Width | 2.3876mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |