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IRLZ34NSPBF

MOSFET N-CH 55V 30A D2PAK


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLZ34NSPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 830
  • Description: MOSFET N-CH 55V 30A D2PAK (Kg)

Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 60mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 3.8W Ta 68W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 8.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 21 ns
Reverse Recovery Time 76 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Nominal Vgs 2 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
See Relate Datesheet

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