Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 5V |
Rise Time | 100ns |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±16V |
Fall Time (Typ) | 29 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 30A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 16V |
Drain to Source Breakdown Voltage | 55V |
Dual Supply Voltage | 55V |
Factory Lead Time | 1 Week |
Nominal Vgs | 2 V |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Height | 4.826mm |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Length | 10.668mm |
Published | 1998 |
Series | HEXFET® |
Width | 9.65mm |
Radiation Hardening | No |
JESD-609 Code | e3 |
REACH SVHC | No SVHC |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
RoHS Status | ROHS3 Compliant |
Number of Terminations | 2 |
Termination | SMD/SMT |
Lead Free | Contains Lead |
ECCN Code | EAR99 |
Resistance | 35mOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 30A |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 3.8W Ta 68W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 68W |
Case Connection | DRAIN |
Turn On Delay Time | 8.9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 35m Ω @ 16A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |