IRS2001PBF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1W |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 250 |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRS2001PBF |
| Number of Outputs | 2 |
| Output Voltage | 20V |
| Max Output Current | 600mA |
| Power Supplies | 15V |
| Nominal Supply Current | 270μA |
| Power Dissipation | 1W |
| Output Current | 130mA |
| Max Supply Current | 270μA |
| Propagation Delay | 220 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 160 ns |
| Rise Time | 100ns |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 150 ns |
| Release Time | 150 ns |
| Rise / Fall Time (Typ) | 70ns 35ns |
| Interface IC Type | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 290mA 600mA |
| Logic Voltage - VIL, VIH | 0.8V 2.5V |
| Built-in Protections | TRANSIENT; UNDER VOLTAGE |
| High Side Voltage - Max (Bootstrap) | 200V |
| Height | 4.9276mm |
| Length | 10.8966mm |
| Width | 7.11mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRS2001PBF Overview
For greater flexibility, the 8-DIP (0.300, 7.62mm) package is adopted.A packaging method of Tube is indicated.In this case, gate drivers is mounted along the way of Through Hole.A supply voltage of 10V~20V demonstrates its superiority.Gate type IGBT, N-Channel MOSFET has been used in its design.In this device, temperatures must not exceed -40°C~150°C TJ.Non-Inverting is used as the input type in this program.Initially, the configuration is composed of 8 terminations.Numerous related parts are available for its base part number IRS2001PBF.In this case, Through Hole indicates how the device is to be mounted.During design, it is configured with 8 pins.The device is specifically designed to operate at 15V volts.As its interface IC, BUFFER OR INVERTER BASED PERIPHERAL DRIVER is being employed.Mosfet driver is possible for the output current to be as low as 600mA.There are several useful electronic components found in its subcategory of MOSFET Drivers.There can be a voltage up to 200V on the high-side (Bootstrap).Mosfet driver has been integrated wMosfet driverh a total of 2 outputs for Mosfet drivers basis.Mosfet gate drivers can deliver a current of 130mA.Based on its maximum power dissipation of 1W, it is clear that it is capable of transferring and conducting power loss without overheating.The supply current should be kept at 270μA to ensure higher stability.Due to its 15V power supply, it can solve power supply problems for an array of diverse applications.A voltage of 20V is output by this device.
IRS2001PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 1W
IRS2001PBF Applications
There are a lot of Infineon Technologies IRS2001PBF gate drivers applications.
- Solar inverters
- Commercial and agricultural vehicles (CAV)
- DC/DC converters
- Topologies
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- Dual-Battery Systems
- Motor Controls
- Telecom switch mode power supplies
- Power factor correction (PFC) circuits
- Isolated switch mode power supplies (SMPS)
