Parameters |
Factory Lead Time |
1 Week |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
1996 |
JESD-609 Code |
e3 |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Subcategory |
MOSFET Drivers |
Max Power Dissipation |
625mW |
Technology |
CMOS |
Voltage - Supply |
10V~20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Number of Functions |
1 |
Supply Voltage |
15V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRS2001SPBF |
Number of Outputs |
2 |
Output Voltage |
220V |
Max Output Current |
600mA |
Power Supplies |
15V |
Nominal Supply Current |
270μA |
Power Dissipation |
625mW |
Output Current |
130mA |
Max Supply Current |
270μA |
Propagation Delay |
220 ns |
Input Type |
Non-Inverting |
Turn On Delay Time |
160 ns |
Rise Time |
170ns |
Fall Time (Typ) |
60 ns |
Turn-Off Delay Time |
150 ns |
Release Time |
150 ns |
Rise / Fall Time (Typ) |
70ns 35ns |
Interface IC Type |
BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
Channel Type |
Independent |
Driven Configuration |
Half-Bridge |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
290mA 600mA |
Logic Voltage - VIL, VIH |
0.8V 2.5V |
Built-in Protections |
TRANSIENT; UNDER VOLTAGE |
High Side Voltage - Max (Bootstrap) |
200V |
Height |
1.4986mm |
Length |
4.9784mm |
Width |
3.9878mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IRS2001SPBF Overview
A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) package.Tube is the form of the package.Surface Mount is mounted in the way.WGate driversh a 10V~20V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.There is a temperature range for this device of -40°C~150°C TJ.The input type is Non-Inverting.8 terminations constitute its foundation.Under its base part number IRS2001SPBF, various related parts can be found.The device is mounted using Surface Mount.When designing, the device is configured with 8 pins.Mosfet driver is designed specifically to run on 15V volts of power.Mosfet driver employs an interface chip called BUFFER OR INVERTER BASED PERIPHERAL DRIVER as Mosfet drivers interface chip.In the maximum case, the output current can be limited to 600mA.There are several useful electronic components in this subcategory of MOSFET Drivers.Maximum (Bootstrap) voltage is 200V.The basis of this model has 2 outputs integrated.Mosfet gate drivers supports a current output of 130mA.The maximum power dissipation of 625mW shows its maximum capability to transfer and conduct power loss without overheating.Keeping the supply current at 270μA ensures greater stability.Due to its power supply of 15V, it provides an effective solution to power supply problems for a wide range of applications.Mosfet gate drivers outputs 220V as voltage.
IRS2001SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 625mW
IRS2001SPBF Applications
There are a lot of Infineon Technologies IRS2001SPBF gate drivers applications.
- Video amplifiers
- serial peripheral interface (SPI), I2C
- Industrial motor drives - compact, standard, premium, servo drives
- Power factor correction (PFC) circuits
- White Goods - Air Conditioner, Washing Machine,
- Refrigerator
- General Purpose 3-Phase Inverter
- Digitally controlled power supplies
- High-voltage isolated DC-DC converters
- Topologies