IRS2003PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1W |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Base Part Number | IRS2003PBF |
| Number of Outputs | 2 |
| Output Voltage | 20V |
| Max Output Current | 600mA |
| Power Supplies | 15V |
| Nominal Supply Current | 270μA |
| Power Dissipation | 1W |
| Output Current | 130mA |
| Max Supply Current | 270μA |
| Propagation Delay | 820 ns |
| Input Type | Inverting, Non-Inverting |
| Turn On Delay Time | 680 ns |
| Rise Time | 170ns |
| Fall Time (Typ) | 90 ns |
| Turn-Off Delay Time | 150 ns |
| Release Time | 150 ns |
| Rise / Fall Time (Typ) | 70ns 35ns |
| Channel Type | Independent |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 290mA 600mA |
| Logic Voltage - VIL, VIH | 0.8V 2.5V |
| Built-in Protections | TRANSIENT; UNDER VOLTAGE |
| High Side Voltage - Max (Bootstrap) | 200V |
| Height | 4.9276mm |
| Length | 10.8966mm |
| Width | 7.11mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRS2003PBF Overview
A higher degree of flexibility is achieved by adopting its 8-DIP (0.300, 7.62mm) package.A packaging method of Tube is indicated.In the direction of Through Hole, gate drivers is mounted.A supply voltage of 10V~20V demonstrates its superiority.The gate type on this device is IGBT, N-Channel MOSFET.For this device, the temperature range is -40°C~150°C TJ.Mosfet driver uses Inverting, Non-Inverting as Mosfet drivers input type.The configuration starts with 8 terminations.The base part number IRS2003PBF refers to a number of related parts.Devices are mounted by Through Hole.When the device is designed, it has 8 pins.A supply voltage of 15V is required for operation.There is an output current limit of 600mA for this device.There are several useful electronic components found in its subcategory of MOSFET Drivers.Maximum (Bootstrap) voltage can be up to 200V.The basis of the model has 2 outputs integrated.This device is capable of delivering 130mA current.According to its maximum power dissipation, 1W is capable of conducting and transferring a large amount of power without overheating.As a precaution, make sure the supply current is kept at 270μA.Due to its 15V power supply, it can solve power supply problems for an array of diverse applications.When this voltage is produced, it is marked as 20V.
IRS2003PBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 1W
IRS2003PBF Applications
There are a lot of Infineon Technologies IRS2003PBF gate drivers applications.
- Motor Controls
- Line drivers
- Industrial Power Supplies
- General Purpose 3-Phase Inverter
- Solar inverters
- Multicolor LED/laser displays
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Welding
- RGB applications
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
