Parameters |
Factory Lead Time |
1 Week |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
1996 |
JESD-609 Code |
e3 |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory |
MOSFET Drivers |
Max Power Dissipation |
625mW |
Technology |
CMOS |
Voltage - Supply |
10V~20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Number of Functions |
1 |
Supply Voltage |
15V |
Base Part Number |
IRS2004SPBF |
Number of Outputs |
2 |
Output Voltage |
220V |
Max Output Current |
600mA |
Power Supplies |
15V |
Nominal Supply Current |
150μA |
Power Dissipation |
625mW |
Output Current |
130mA |
Max Supply Current |
270μA |
Propagation Delay |
160 ns |
Input Type |
Non-Inverting |
Turn On Delay Time |
680 ns |
Max Output Voltage |
20V |
Rise Time |
70ns |
Fall Time (Typ) |
35 ns |
Turn-Off Delay Time |
150 ns |
Min Output Voltage |
10V |
Release Time |
150 ns |
Rise / Fall Time (Typ) |
70ns 35ns |
Channel Type |
Synchronous |
Driven Configuration |
Half-Bridge |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
290mA 600mA |
Max Junction Temperature (Tj) |
150°C |
Logic Voltage - VIL, VIH |
0.8V 2.5V |
Built-in Protections |
TRANSIENT; UNDER VOLTAGE |
High Side Voltage - Max (Bootstrap) |
200V |
Ambient Temperature Range High |
125°C |
Height |
1.75mm |
Length |
4.9784mm |
Width |
3.9878mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IRS2004SPBF Overview
Its 8-SOIC (0.154, 3.90mm Width) package is adopted for higher flexibility.Tube is the packaging method.Surface Mount is mounted in the way.A supply voltage of 10V~20V demonstrates its superiority.Gate type IGBT, N-Channel MOSFET is designed for it.In this device, temperatures must not exceed -40°C~150°C TJ.Non-Inverting is used as its input type.The configuration starts with 8 terminations.The base part number IRS2004SPBF refers to a number of related parts.Mosfet driver is mounted using the Surface Mount method.Mosfet driver is configured wMosfet driverh 8 pins when designing.The device is specifically designed to function with a supply voltage of 15V V.There is a maximum output current of 600mA.There are various useful electronic components in its subcategory MOSFET Drivers.There can be a voltage up to 200V on the high-side (Bootstrap).For its basis, there are 2 outputs integrated.Mosfet gate drivers can deliver a current of 130mA.Using 625mW as an example, the maximum power dissipation shows how well it is able to transfer and conduct power loss without becoming overheated.Mosfet gate drivers is recommended that you keep the supply current at 270μA in order to achieve greater stabilMosfet gate driversy.Due to its power supply of 15V, it provides an effective solution to power supply problems for a wide range of applications.When this voltage is produced, it is marked as 220V.A maximum output voltage of 20V should be maintained.
IRS2004SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 200V
Maximum power dissipation of 625mW
IRS2004SPBF Applications
There are a lot of Infineon Technologies IRS2004SPBF gate drivers applications.
- High-voltage isolated DC-DC converters
- Motor Control
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Refrigerator
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- Digitally controlled power supplies
- AC-DC Inverters
- Dual-Battery Systems
- General Purpose 3-Phase Inverter
- Industrial Power Supplies