IRS2008MPBFAUMA1
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 14-VFQFN Exposed Pad |
| Operating Temperature | -40°C~125°C TA |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Voltage - Supply | 10V~20V |
| Input Type | CMOS |
| Rise / Fall Time (Typ) | 70ns 30ns |
| Channel Type | Synchronous |
| Number of Drivers | 1 |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 290mA 600mA |
| Logic Voltage - VIL, VIH | 0.8V 2.5V |
| High Side Voltage - Max (Bootstrap) | 200V |
| Factory Lead Time | 1 Week |
IRS2008MPBFAUMA1 Overview
For greater flexibility, its 14-VFQFN Exposed Pad package is used.Gate drivers is package in Tape & Reel (TR) case.Configuration is based on 1 drivers.Ideally, it should be mounted in the direction of Surface Mount.When the supply voltage is 10V~20V it is able to demonstrate its superiority.This gate type has a IGBT, N-Channel MOSFET design.-40°C~125°C TA is the allowed temperature range for this device.The input type is CMOS.A boot strap voltage of 200V is the maximum possible high-side voltage.
IRS2008MPBFAUMA1 Features
Embedded in the Tape & Reel (TR) package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 200V
IRS2008MPBFAUMA1 Applications
There are a lot of Infineon Technologies IRS2008MPBFAUMA1 gate drivers applications.
- Uninterruptible Power Supplies (UPS)
- Dual-Battery Systems
- Smart Phones
- Head-up and Head mounted displays
- PCMCIA applications
- Isolated Gate Driver Supplies
- Solar inverters
- Industrial Power Supplies
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Isolated switch mode power supplies (SMPS)
