Parameters |
Factory Lead Time |
1 Week |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
1996 |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Subcategory |
MOSFET Drivers |
Max Power Dissipation |
625mW |
Technology |
CMOS |
Voltage - Supply |
10V~20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Number of Functions |
1 |
Supply Voltage |
15V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRS2101SPBF |
Number of Outputs |
2 |
Output Voltage |
620V |
Max Output Current |
600mA |
Power Supplies |
15V |
Nominal Supply Current |
270μA |
Power Dissipation |
625mW |
Output Current |
290mA |
Max Supply Current |
270μA |
Propagation Delay |
220 ns |
Input Type |
Non-Inverting |
Turn On Delay Time |
50 ns |
Rise Time |
170ns |
Fall Time (Typ) |
90 ns |
Turn-Off Delay Time |
150 ns |
Release Time |
150 ns |
Rise / Fall Time (Typ) |
70ns 35ns |
Interface IC Type |
BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
Channel Type |
Independent |
Driven Configuration |
High-Side or Low-Side |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
290mA 600mA |
Logic Voltage - VIL, VIH |
0.8V 2.5V |
Built-in Protections |
TRANSIENT; UNDER VOLTAGE |
High Side Voltage - Max (Bootstrap) |
600V |
Height |
1.4986mm |
Length |
4.9784mm |
Width |
3.9878mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
IRS2101SPBF Overview
Its 8-SOIC (0.154, 3.90mm Width) package provides greater flexibility.A package of Tube has been used.There is a mounting bracket in the way of Surface Mount.When the supply voltage is set to 10V~20V, it can demonstrate its superiority.There is a gate type of IGBT, N-Channel MOSFET in this design.The allowable temperature range that this device can be operated in is -40°C~150°C TJ.Mosfet driver accepts input of type Non-Inverting.Mosfet driver is based on 8 terminations.Many related parts can be found under its base part number IRS2101SPBF.The mount method is Surface Mount.There are 8 pins available in the device.The device is specifically designed to function with a supply voltage of 15V V.Mosfet driver utilizes the interface IC BUFFER OR INVERTER BASED PERIPHERAL DRIVER.600mA is the maximum output current.Mosfet driver includes a number of useful electronic components in Mosfet drivers subcategory of MOSFET Drivers.A high-side voltage can be set up to 600V (Bootstrap).The basis of this model has 2 outputs integrated.The output current supported by the device is 290mA.This device has a maximum power dissipation of 625mW, indicating that it is capable of reducing power loss without overheating.For higher stability, the supply current should be kept at 270μA.Mosfet gate drivers solves the power supply problems for diverse applications based on Mosfet gate driverss power supplies of 15V.When this voltage is produced, it is marked as 620V.
IRS2101SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS2101SPBF Applications
There are a lot of Infineon Technologies IRS2101SPBF gate drivers applications.
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Topologies
- Telecom switch mode power supplies
- Industrial Modules
- Video amplifiers
- Solar power supplies
- DC-DC Converters
- PCMCIA applications
- Uninterruptible Power Supplies (UPS)
- Industrial Motor Inverter - Power Tools, Robotics