IRS2108SPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 625mW |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Base Part Number | IRS2108SPBF |
| Number of Outputs | 2 |
| Output Voltage | 20V |
| Max Output Current | 600mA |
| Power Supplies | 15V |
| Nominal Supply Current | 1mA |
| Power Dissipation | 625mW |
| Output Current | 290mA |
| Max Supply Current | 1.6mA |
| Propagation Delay | 300 ns |
| Input Type | Inverting, Non-Inverting |
| Turn On Delay Time | 30 ns |
| Rise Time | 220ns |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 30 ns |
| Release Time | 200 ns |
| Rise / Fall Time (Typ) | 100ns 35ns |
| Channel Type | Independent |
| Turn On Time | 0.3 μs |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 290mA 600mA |
| Logic Voltage - VIL, VIH | 0.8V 2.5V |
| Built-in Protections | TRANSIENT; UNDER VOLTAGE |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRS2108SPBF Overview
For greater flexibility, its 8-SOIC (0.154, 3.90mm Width) package is used.A packaging method of Tube is used.In this case, gate drivers is mounted along the way of Surface Mount.In the absence of a power supply voltage of 10V~20V V, it is able to demonstrate its superiority.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.The allowable temperature range that this device can be operated in is -40°C~150°C TJ.Input type of Inverting, Non-Inverting is used.As a result of its configuration, it contains a maximum of 8 terminations.Numerous related parts can be found under its base part number IRS2108SPBF.In this case, Surface Mount indicates how the device is to be mounted.At the time of design, it is configured with 8 pins.Mosfet driver is designed specifically to run on 15V volts of power.In the maximum case, the output current can be limited to 600mA.Its subcategory of MOSFET Drivers contains various useful electronic components.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 600V.The basis of this model has 2 outputs integrated.Mosfet gate drivers can deliver a current of 290mA.Its maximum power dissipation of 625mW also demonstrates its maximum ability to transfer power without overheating.To increase stability, keep the supply current at 1.6mA.With its power supplies of 15V, it solves the power supply problems for diverse applications.As a result, a voltage of 20V is produced.
IRS2108SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS2108SPBF Applications
There are a lot of Infineon Technologies IRS2108SPBF gate drivers applications.
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Portable Media Players
- 3-Phase Motor Inverter Driver
- Welding
- Multicolor LED/laser displays
- Motor Control
- Industrial motor drives - compact, standard, premium, servo drives
- Active filtering
- Uninterruptible Power Supplies (UPS)
- High frequency line drivers
