IRS2109SPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 625mW |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Base Part Number | IRS2109S |
| Number of Outputs | 2 |
| Output Voltage | 20V |
| Max Output Current | 600mA |
| Power Supplies | 15V |
| Nominal Supply Current | 1.6mA |
| Power Dissipation | 625mW |
| Output Current | 290mA |
| Max Supply Current | 1.6mA |
| Propagation Delay | 950 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 750 ns |
| Rise Time | 220ns |
| Fall Time (Typ) | 80 ns |
| Turn-Off Delay Time | 200 ns |
| Release Time | 200 ns |
| Rise / Fall Time (Typ) | 100ns 35ns |
| Channel Type | Synchronous |
| Turn On Time | 0.95 μs |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 290mA 600mA |
| Logic Voltage - VIL, VIH | 0.8V 2.5V |
| Built-in Protections | TRANSIENT; UNDER VOLTAGE |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRS2109SPBF Overview
A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) package.The packaging method is indicated by Tube.Its recommended mounting way is Surface Mount.When the supply voltage is 10V~20V it is able to demonstrate its superiority.This device is designed with a IGBT, N-Channel MOSFET gate type.-40°C~150°C TJ is the allowed temperature range for this device.Non-Inverting is the input type used in this program.Its configuration starts with 8 terminations.There are various related parts under its base part number IRS2109S.In this case, Surface Mount indicates how the device is mounted.When the device is designed, it has 8 pins.A supply voltage of 15V is required for operation.600mA is the maximum output current.Mosfet driver includes a number of useful electronic components in Mosfet drivers subcategory of MOSFET Drivers.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 600V.Mosfet driver is based on a basis of 2 outputs that have been integrated.Mosfet driver supports an output current of 290mA.Considering its maximum power dissipation, 625mW shows its maximum capacity to transfer and conduct power loss without overheating.To maintain higher stability, the supply current should always be 1.6mA.Due to its power supplies of 15V, it solves the power supply problem for a wide range of applications.As a result, a voltage of 20V is produced.
IRS2109SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS2109SPBF Applications
There are a lot of Infineon Technologies IRS2109SPBF gate drivers applications.
- Portable computers
- Head-up and Head mounted displays
- Power factor correction (PFC) circuits
- UPS systems
- Industrial Modules
- Dual-Battery Systems
- Topologies
- Smart Phones
- A/D drivers
- Isolated Supplies for Motor Control
