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IRS2110SPBF

Surface Mount Tube Active EAR99 Gate Drivers ICs Non-Inverting 500V V 16-SOIC (0.295, 7.50mm Width) IRS2110SPBF Half-Bridge


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRS2110SPBF
  • Package: 16-SOIC (0.295, 7.50mm Width)
  • Datasheet: PDF
  • Stock: 277
  • Description: Surface Mount Tube Active EAR99 Gate Drivers ICs Non-Inverting 500V V 16-SOIC (0.295, 7.50mm Width) IRS2110SPBF Half-Bridge (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295, 7.50mm Width)
Number of Pins 14
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 1996
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 16
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory MOSFET Drivers
Max Power Dissipation 1.25W
Technology CMOS
Voltage - Supply 10V~20V
Terminal Position DUAL
Terminal Form GULL WING
Number of Functions 1
Supply Voltage 15V
Base Part Number IRS2110SPBF
JESD-30 Code R-PDSO-G16
Number of Outputs 2
Output Voltage 520V
Max Output Current 2.5A
Power Supplies 15V
Nominal Supply Current 340μA
Power Dissipation 1.25W
Output Current 2.5A
Max Supply Current 340μA
Propagation Delay 160 ns
Input Type Non-Inverting
Turn On Delay Time 10 ns
Rise Time 35ns
Fall Time (Typ) 25 ns
Turn-Off Delay Time 10 ns
Release Time 120 ns
Rise / Fall Time (Typ) 25ns 17ns
Interface IC Type BUFFER OR INVERTER BASED PERIPHERAL DRIVER
Channel Type Independent
Turn On Time 0.16 μs
Driven Configuration Half-Bridge
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 2.5A 2.5A
Logic Voltage - VIL, VIH 6V 9.5V
Turn Off Time 0.15 μs
Built-in Protections TRANSIENT; UNDER VOLTAGE
High Side Voltage - Max (Bootstrap) 500V
Height 2.35mm
Length 10.4902mm
Width 7.5946mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRS2110SPBF Overview


The 16-SOIC (0.295, 7.50mm Width) package offers greater flexibility.A packaging method of Tube is indicated.Surface Mount is mounted in the way of the device.When the supply voltage is 10V~20V it is able to demonstrate its superiority.This gate type has a IGBT, N-Channel MOSFET design.There is a temperature range for this device of -40°C~150°C TJ.A type of Non-Inverting is used for input in this program.Mosfet driver is based on 16 terminations.Numerous related parts are available for its base part number IRS2110SPBF.In this case, Surface Mount indicates how the device is to be mounted.Mosfet driver is configured wMosfet driverh 14 pins when designing.In order to operate, a voltage of 15V has to be applied.BUFFER OR INVERTER BASED PERIPHERAL DRIVER is employed as its interface IC.Mosfet driver is possible to achieve a maximum output current of 2.5A.Within this subcategory of MOSFET Drivers, there are several useful electronic components.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 500V.The basis of this system consists of 2 outputs.This device is capable of delivering 2.5A current.According to its maximum power dissipation, 1.25W is capable of conducting and transferring a large amount of power without overheating.To ensure high stability, the supply current should be kept at 340μA.Using its power supply of 15V, it provides solutions to diverse power supply problems.Mosfet gate drivers outputs 520V as voltage.

IRS2110SPBF Features


Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 500V
Maximum power dissipation of 1.25W

IRS2110SPBF Applications


There are a lot of Infineon Technologies IRS2110SPBF gate drivers applications.

  • Power factor correction (PFC) circuits
  • serial peripheral interface (SPI), I2C
  • Industrial motor drives - compact, standard, premium, servo drives
  • Isolated Supplies for controller area network (CAN),
  • Dual-Battery Systems
  • High-speed communications
  • RGB applications
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • PCMCIA applications

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