IRS2112PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 14-DIP (0.300, 7.62mm) |
| Number of Pins | 14 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 14 |
| ECCN Code | EAR99 |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1.6W |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Base Part Number | IRS2112PBF |
| Output Voltage | 620V |
| Max Output Current | 600mA |
| Power Supplies | 15V |
| Nominal Supply Current | 80μA |
| Power Dissipation | 1.6W |
| Output Current | 290mA |
| Max Supply Current | 180μA |
| Propagation Delay | 180 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 135 ns |
| Rise Time | 130ns |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 130 ns |
| Release Time | 105 ns |
| Rise / Fall Time (Typ) | 75ns 35ns |
| Interface IC Type | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Turn On Time | 0.18 μs |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 290mA 600mA |
| Logic Voltage - VIL, VIH | 6V 9.5V |
| Turn Off Time | 0.16 μs |
| Built-in Protections | TRANSIENT; UNDER VOLTAGE |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 5.33mm |
| Length | 20.19mm |
| Width | 7.11mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRS2112PBF Overview
A higher level of flexibility is provided by its 14-DIP (0.300, 7.62mm) package.The packaging method is indicated by Tube.This device is equipped with 2 drivers for its configuration.The device is mounted in the direction of Through Hole.Gate drivers can demonstrate Gate driverss superiorGate driversy wGate driversh a 10V~20V supply voltage.Gate type IGBT, N-Channel MOSFET is designed for it.Temperature range -40°C~150°C TJ is allowed for this device.This program uses the input type of Non-Inverting.Mosfet driver consists of 14 terminations as Mosfet drivers foundation.There are various parts that can be found under its base part number IRS2112PBF.In this case, Through Hole indicates how the device is to be mounted.The pins are configured with 14 when designing the chip.The device is specifically designed to function with a supply voltage of 15V V.In this case, BUFFER OR INVERTER BASED PERIPHERAL DRIVER serves as the interface IC.Mosfet driver is possible to achieve a maximum output current of 600mA.In this subcategory of MOSFET Drivers, there are numerous useful electronic components.Mosfet driver is possible to set the high-side voltage - Max (Bootstrap) to 600V.An output current of 290mA is supported.Based on the maximum power dissipation of 1.6W, it is clear that it is capable of transferring and conducting power losses without becoming overheated.Keeping the supply current at 180μA ensures greater stability.With its power supplies of 15V, it solves the problems of power supply for a variety of applications.Mosfet gate drivers produces a voltage of 620V.
IRS2112PBF Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
14 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1.6W
IRS2112PBF Applications
There are a lot of Infineon Technologies IRS2112PBF gate drivers applications.
- General Purpose 3-Phase Inverter
- Uninterruptible Power Supplies (UPS)
- Commercial and agricultural vehicles (CAV)
- Motor controllers
- Commercial air-conditioning (CAC)
- Broadcast equipment
- Isolated switch mode power supplies (SMPS)
- Industrial Modules
- Active Clamp Flyback or Forward and Synchronous Rectifier
- High current laser/LED systems
