IRS21271PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300, 7.62mm) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 125Ohm |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 1W |
| Technology | CMOS |
| Voltage - Supply | 9V~20V |
| Terminal Position | DUAL |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Terminal Pitch | 2.54mm |
| Base Part Number | IRS21271PBF |
| Max Output Current | 600mA |
| Nominal Supply Current | 120μA |
| Power Dissipation | 1W |
| Output Current | 200mA |
| Max Supply Current | 120μA |
| Propagation Delay | 200 ns |
| Input Type | Non-Inverting |
| Turn On Delay Time | 150 ns |
| Rise Time | 130ns |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 150 ns |
| Rise / Fall Time (Typ) | 80ns 40ns |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
| Channel Type | Single |
| Number of Drivers | 1 |
| Turn On Time | 0.2 μs |
| Output Peak Current Limit-Nom | 0.6A |
| Driven Configuration | High-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 290mA 600mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.5V |
| Turn Off Time | 0.2 μs |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 5.33mm |
| Length | 10.92mm |
| Width | 7.11mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRS21271PBF Overview
In order to increase flexibility, the package 8-DIP (0.300, 7.62mm) is used.Tube represents the packaging method.Gate drivers incorporates wGate driversh 1 drivers for Gate driverss configuration.Through Hole is mounted in the way of the device.When the supply voltage is set to 9V~20V, it can demonstrate its superiority.A gate type of IGBT, N-Channel MOSFET is used in its design.This device can operate at temperatures up to -40°C~150°C TJ.Non-Inverting is used as the input type.The configuration starts with 8 terminations.Mosfet driver contains a variety of related parts under Mosfet drivers base part number IRS21271PBF.Mosfet driver is mounted using Through Hole.At the time of design, it is configured with 8 pins.In addition, it is specifically designed to operate with a supply voltage of 15V.There is an interface IC called BUFFER OR INVERTER BASED MOSFET DRIVER that is employed in this device.There is a maximum output current of 600mA.The subcategory of MOSFET Drivers contains a wide variety of useful electronic components.A high-side voltage can be set up to 600V (Bootstrap).Mosfet gate drivers supports a current output of 200mA.1W dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.Mosfet gate drivers is recommended that you keep the supply current at 120μA in order to achieve greater stabilMosfet gate driversy.For this device to function, a resistance value of 125Ohm is required.
IRS21271PBF Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 1W
Resistance of 125Ohm
IRS21271PBF Applications
There are a lot of Infineon Technologies IRS21271PBF gate drivers applications.
- Industrial Motor Inverter - Power Tools, Robotics
- Portable computers
- Motor Controls
- Industrial Modules
- Motor Control
- DC-DC Converters
- Multicolor LED/laser displays
- Welding
- Commercial and agricultural vehicles (CAV)
- PCMCIA applications
