Parameters |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
1996 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
125Ohm |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory |
MOSFET Drivers |
Max Power Dissipation |
625mW |
Technology |
CMOS |
Voltage - Supply |
9V~20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Number of Functions |
1 |
Supply Voltage |
15V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRS21281SPBF |
Output Voltage |
20V |
Max Output Current |
600mA |
Nominal Supply Current |
60μA |
Power Dissipation |
625mW |
Output Current |
290mA |
Max Supply Current |
120μA |
Propagation Delay |
200 ns |
Input Type |
Inverting |
Turn On Delay Time |
80 ns |
Rise Time |
130ns |
Fall Time (Typ) |
65 ns |
Turn-Off Delay Time |
40 ns |
Rise / Fall Time (Typ) |
80ns 40ns |
Interface IC Type |
BUFFER OR INVERTER BASED MOSFET DRIVER |
Channel Type |
Single |
Number of Drivers |
1 |
Turn On Time |
0.2 μs |
Output Peak Current Limit-Nom |
0.6A |
Driven Configuration |
High-Side |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
290mA 600mA |
High Side Driver |
YES |
Logic Voltage - VIL, VIH |
0.8V 2.5V |
Turn Off Time |
0.2 μs |
High Side Voltage - Max (Bootstrap) |
600V |
Height |
1.4986mm |
Length |
4.9784mm |
Width |
3.9878mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
IRS21281SPBF Overview
Its 8-SOIC (0.154, 3.90mm Width) package is adopted for higher flexibility.Tube represents the packaging method.This configuration includes 1 drivers.There is a mounting bracket in the way of Surface Mount.By using 9V~20V supply voltage, it is able to demonstrate its superiority.A gate type of IGBT, N-Channel MOSFET has been used in its design.This device is allowed to operate in a temperature range of -40°C~150°C TJ.Inverting is used as the input type.Its configuration is based on a total of 8 terminations.The base part number IRS21281SPBF refers to a number of related parts.Mounting the device requires Surface Mount.During design, it is configured with 8 pins.Specification is for 15V supply voltage operation.In this case, BUFFER OR INVERTER BASED MOSFET DRIVER serves as the interface IC.As a maximum, there is 600mA limit to the output current.There are several useful electronic components within its subcategory MOSFET Drivers.Maximum (Bootstrap) voltage can be up to 600V.290mA is the maximum output current supported by the device.Considering its maximum power dissipation, 625mW shows its maximum capacity to transfer and conduct power loss without overheating.If you want a stable supply current, you should keep it at 120μA.When this voltage is produced, it is marked as 20V.This device requires a resistance value of 125Ohm.
IRS21281SPBF Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
Resistance of 125Ohm
IRS21281SPBF Applications
There are a lot of Infineon Technologies IRS21281SPBF gate drivers applications.
- Telecom switch mode power supplies
- Industrial Power Supplies
- Active Clamp Flyback or Forward and Synchronous Rectifier
- Solar inverters
- RGB applications
- DC/DC converters
- serial peripheral interface (SPI), I2C
- Dual-Battery Systems
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Motor Control