Parameters |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1996 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
2 (1 Year) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
125Ohm |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory |
MOSFET Drivers |
Max Power Dissipation |
625mW |
Technology |
CMOS |
Voltage - Supply |
12V~20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Number of Functions |
1 |
Supply Voltage |
15V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRS2128SPBF |
Max Output Current |
600mA |
Nominal Supply Current |
120μA |
Power Dissipation |
625mW |
Output Current |
200mA |
Max Supply Current |
120μA |
Propagation Delay |
200 ns |
Input Type |
Inverting |
Turn On Delay Time |
150 ns |
Rise Time |
130ns |
Fall Time (Typ) |
65 ns |
Turn-Off Delay Time |
150 ns |
Rise / Fall Time (Typ) |
80ns 40ns |
Interface IC Type |
BUFFER OR INVERTER BASED MOSFET DRIVER |
Channel Type |
Single |
Number of Drivers |
1 |
Turn On Time |
0.2 μs |
Output Peak Current Limit-Nom |
0.6A |
Driven Configuration |
High-Side |
Gate Type |
IGBT, N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
290mA 600mA |
High Side Driver |
YES |
Logic Voltage - VIL, VIH |
0.8V 2.5V |
Turn Off Time |
0.2 μs |
High Side Voltage - Max (Bootstrap) |
600V |
Height |
1.4986mm |
Length |
4.9784mm |
Width |
3.9878mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
IRS2128STRPBF Overview
For greater flexibility, the 8-SOIC (0.154, 3.90mm Width) package is adopted.The packaging method is indicated by Tape & Reel (TR).For its configuration, it incorporates 1 drivers.Its recommended mounting way is Surface Mount.In the absence of a 12V~20V supply voltage, it can demonstrate its superiority.Gate drivers is designed wGate driversh a IGBT, N-Channel MOSFET gate.This device allows temperatures in the range of -40°C~150°C TJ.Inverting is the input type used in this program.Initially, the configuration is composed of 8 terminations.There are various parts that can be found under its base part number IRS2128SPBF.The device is mounted using Surface Mount.When the device is designed, it has 8 pins.The device is specifically designed to function with a supply voltage of 15V V.Mosfet driver employs an interface chip called BUFFER OR INVERTER BASED MOSFET DRIVER as Mosfet drivers interface chip.There is a maximum output current of 600mA.Mosfet driver includes a number of useful electronic components in Mosfet drivers subcategory of MOSFET Drivers.The high-side voltage - Max (Bootstrap) can be up to 600V.Mosfet gate drivers supports a current output of 200mA.Using 625mW as an example, the maximum power dissipation shows how well it is able to transfer and conduct power loss without becoming overheated.The supply current should be kept at 120μA to ensure higher stability.The resistance of the device is 125Ohm.
IRS2128STRPBF Features
Embedded in the Tape & Reel (TR) package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
Resistance of 125Ohm
IRS2128STRPBF Applications
There are a lot of Infineon Technologies IRS2128STRPBF gate drivers applications.
- High frequency line drivers
- Industrial Modules
- Solar power supplies
- Automotive Applications
- LCD/LCoS/DLP portable and embedded pico projectors
- AC-DC Inverters
- Multicolor LED/laser displays
- Digitally controlled power supplies
- Telecom switch mode power supplies
- Industrial Power Supplies