IRS2609DSPBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 200Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | MOSFET Drivers |
| Max Power Dissipation | 625mW |
| Technology | CMOS |
| Voltage - Supply | 10V~20V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 15V |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRS2609DSPBF |
| Number of Outputs | 1 |
| Output Voltage | 620V |
| Max Output Current | 350mA |
| Nominal Supply Current | 2mA |
| Power Dissipation | 625mW |
| Output Current | 200mA |
| Propagation Delay | 1.1 μs |
| Input Type | Non-Inverting |
| Turn On Delay Time | 60 ns |
| Rise Time | 220ns |
| Fall Time (Typ) | 80 ns |
| Turn-Off Delay Time | 250 ns |
| Rise / Fall Time (Typ) | 150ns 50ns |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Output Peak Current Limit-Nom | 0.2A |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 200mA 350mA |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 2.2V |
| Turn Off Time | 0.4 μs |
| High Side Voltage - Max (Bootstrap) | 600V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
IRS2609DSPBF Overview
In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) is used.A packaging method of Tube is indicated.This device is equipped with 2 drivers for its configuration.Surface Mount is the way in which it is mounted.WGate driversh a 10V~20V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.This device is designed with a IGBT, N-Channel MOSFET gate type.Mosfet driver is possible to use this device at temperatures as low as -40°C~150°C TJ.Non-Inverting is used as the input type.8 terminations constitute its foundation.There are various parts that can be found under its base part number IRS2609DSPBF.Devices are mounted by Surface Mount.At the time of design, it is configured with 8 pins.In order to operate, a voltage of 15V has to be applied.There is a maximum output current of 350mA.There are several useful electronic components within its subcategory MOSFET Drivers.A high-side voltage can be set up to 600V (Bootstrap).The basis of this system consists of 1 outputs.Mosfet driver supports an output current of 200mA.This device has a maximum power dissipation of 625mW, indicating that it is capable of reducing power loss without overheating.In this case, it produces a voltage of 620V.Mosfet gate drivers operates wMosfet gate driversh a resistance of 200Ohm.
IRS2609DSPBF Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
Resistance of 200Ohm
IRS2609DSPBF Applications
There are a lot of Infineon Technologies IRS2609DSPBF gate drivers applications.
- High power buffers
- Uninterruptible Power Supplies (UPS)
- High-voltage isolated DC-DC converters
- 3-Phase Motor Inverter Driver
- A/D drivers
- Solar power supplies
- Industrial Motor Inverter - Power Tools, Robotics
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- Portable Media Players
- White Goods - Air Conditioner, Washing Machine,
