Parameters |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Operating Temperature |
0°C~125°C TJ |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Supply |
6.8V~13.2V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
ISL6594 |
Input Type |
Non-Inverting |
Rise / Fall Time (Typ) |
26ns 18ns |
Channel Type |
Synchronous |
Number of Drivers |
2 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
1.25A 2A |
High Side Voltage - Max (Bootstrap) |
36V |
RoHS Status |
ROHS3 Compliant |
ISL6594DCBZ Overview
Gate drivers provides greater flexibilGate driversy to use the 8-SOIC (0.154, 3.90mm Width) package.Tube is the form of the package.Gate drivers is configured wGate driversh 2 drivers.It's mounted on the way to Surface Mount.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 6.8V~13.2V.Gate type N-Channel MOSFET has been used in its design.For this device, the temperature range is 0°C~125°C TJ.The input type is Non-Inverting.You will find various related parts under the base part number ISL6594.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 36V.
ISL6594DCBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 36V
ISL6594DCBZ Applications
There are a lot of Renesas Electronics America Inc. ISL6594DCBZ gate drivers applications.
- DC-DC Converters
- Welding
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- High-speed communications
- Portable computers
- High power buffers
- Solar inverters
- Power factor correction (PFC) circuits
- General Purpose 3-Phase Inverter
- Isolated Gate Driver Supplies