ISL6608IR-T
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-VQFN Exposed Pad |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Supply | 4.5V~5.5V |
| Base Part Number | ISL6608 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 8ns 8ns |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 2A 2A |
| High Side Voltage - Max (Bootstrap) | 22V |
| RoHS Status | Non-RoHS Compliant |
ISL6608IR-T Overview
For greater flexibility, the 8-VQFN Exposed Pad package is adopted.A packaging method of Tape & Reel (TR) is used.Gate drivers is configured wGate driversh 2 drivers.In the direction of Surface Mount, gate drivers is mounted.In the absence of a power supply voltage of 4.5V~5.5V V, it is able to demonstrate its superiority.Gate type N-Channel MOSFET has been used in its design.This device can operate at temperatures up to -40°C~125°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.Mosfet driver is possible to find various related parts under Mosfet drivers base part number ISL6608.High-side voltage - Max (Bootstrap) can be as low as 22V.
ISL6608IR-T Features
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 22V
ISL6608IR-T Applications
There are a lot of Renesas Electronics America Inc. ISL6608IR-T gate drivers applications.
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Commercial air-conditioning (CAC)
- Industrial Power Supplies
- DC-DC Converters
- Industrial motor drives - compact, standard, premium, servo drives
- LCD/LCoS/DLP portable and embedded pico projectors
- Head-up and Head mounted displays
- UPS systems
- Video amplifiers
- Motor controllers
