Parameters |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) Exposed Pad |
Operating Temperature |
0°C~125°C TJ |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Supply |
7V~13.2V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
ISL6613B |
Input Type |
Non-Inverting |
Rise / Fall Time (Typ) |
26ns 18ns |
Interface IC Type |
FULL BRIDGE BASED MOSFET DRIVER |
Channel Type |
Synchronous |
Number of Drivers |
2 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
1.25A 2A |
High Side Voltage - Max (Bootstrap) |
36V |
RoHS Status |
ROHS3 Compliant |
ISL6613BECBZ Overview
For greater flexibility, its 8-SOIC (0.154, 3.90mm Width) Exposed Pad package is used.A package of Tube has been used.Configuration is supported by 2 drivers.Its recommended mounting way is Surface Mount.In the absence of a 7V~13.2V supply voltage, its superiority can be demonstrated.Gate type N-Channel MOSFET is designed for it.This device allows temperatures in the range of 0°C~125°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.You will find various related parts under the base part number ISL6613B.Mosfet driver is equipped wMosfet driverh an interface chip FULL BRIDGE BASED MOSFET DRIVER.Maximum (Bootstrap) voltage is 36V.
ISL6613BECBZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 36V
ISL6613BECBZ Applications
There are a lot of Renesas Electronics America Inc. ISL6613BECBZ gate drivers applications.
- Automotive Applications
- Industrial Modules
- DC/DC converters
- High-voltage isolated DC-DC converters
- Dual-Battery Systems
- UPS systems
- Telecom switch mode power supplies
- AC-DC Inverters
- High current laser/LED systems
- Commercial and agricultural vehicles (CAV)