ISL6613EIB
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) Exposed Pad |
| Operating Temperature | -40°C~125°C TJ |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Voltage - Supply | 10.8V~13.2V |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | ISL6613 |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 26ns 18ns |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 1.25A 2A |
| High Side Voltage - Max (Bootstrap) | 36V |
| RoHS Status | Non-RoHS Compliant |
ISL6613EIB Overview
The 8-SOIC (0.154, 3.90mm Width) Exposed Pad package offers greater flexibility.The packaging method is indicated by Tube.The configuration is supported by 2 drivers.Ideally, it should be mounted in the direction of Surface Mount.When the supply voltage is 10.8V~13.2V it is able to demonstrate its superiority.Gate type N-Channel MOSFET is designed for it.In this device, temperatures must not exceed -40°C~125°C TJ.Input type of Non-Inverting is used.Mosfet driver contains a variety of related parts under Mosfet drivers base part number ISL6613.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 36V.
ISL6613EIB Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 36V
ISL6613EIB Applications
There are a lot of Renesas Electronics America Inc. ISL6613EIB gate drivers applications.
- Welding
- Portable Navigation Devices
- High current laser/LED systems
- Uninterruptible Power Supplies (UPS)
- High-voltage isolated DC-DC converters
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Motor Control
- Isolated Gate Driver Supplies
- Motor Controls
- General Purpose 3-Phase Inverter
