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ITC1100

Trans RF BJT 30V 80A 3-Pin Case 55SW-1


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-ITC1100
  • Package: 55SW
  • Datasheet: PDF
  • Stock: 498
  • Description: Trans RF BJT 30V 80A 3-Pin Case 55SW-1 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55SW
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 200°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 3.4kW
Terminal Position DUAL
Terminal Form FLAT
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 3.4kW
Power - Max 3400W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 80A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 5A 5V
Collector Emitter Breakdown Voltage 65V
Gain 10dB ~ 10.5dB
Frequency - Transition 1.03GHz
Collector Base Voltage (VCBO) 65V
Emitter Base Voltage (VEBO) 3.5V
Highest Frequency Band L B
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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