IXA12IF1200PB
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | PURE TIN |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 85W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 85W |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 20A |
| Reverse Recovery Time | 350 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.1V |
| Turn On Time | 110 ns |
| Test Condition | 600V, 10A, 100 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 350 ns |
| IGBT Type | PT |
| Gate Charge | 27nC |
| Switching Energy | 1.1mJ (on), 1.1mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 16mm |
| Length | 10.66mm |
| Width | 4.82mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
