Parameters | |
---|---|
Mount | Surface Mount |
Package / Case | SMD/SMT |
Subcategory | Insulated Gate BIP Transistors |
Operating Temperature (Max) | 150°C |
Power Dissipation-Max | 125W |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.1V |
Max Collector Current | 32A |
Collector Emitter Breakdown Voltage | 1.2kV |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
RoHS Status | RoHS Compliant |