Parameters | |
---|---|
Length | 16.13mm |
Width | 5.21mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOPLUS247™ |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
Published | 2010 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 195W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 195W |
Case Connection | ISOLATED |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 58A |
Reverse Recovery Time | 350ns |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 2.1V |
Turn On Time | 110 ns |
Test Condition | 600V, 35A, 27 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
Turn Off Time-Nom (toff) | 350 ns |
IGBT Type | PT |
Gate Charge | 106nC |
Switching Energy | 3.8mJ (on), 4.1mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Height | 21.34mm |