IXA4IF1200UC
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Package / Case | TO-252-3 |
| Transistor Element Material | SILICON |
| Number of Terminations | 2 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 45W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.1V |
| Max Collector Current | 9A |
| Reverse Recovery Time | 350 ns |
| JEDEC-95 Code | TO-252AA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Turn On Time | 110 ns |
| Turn Off Time-Nom (toff) | 350 ns |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
