IXA70I1200NA
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis, Stud, Surface Mount |
| Mounting Type | Chassis, Stud Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 350W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation | 350W |
| Case Connection | ISOLATED |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 100A |
| Current - Collector Cutoff (Max) | 100μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 1.8V |
| Turn On Time | 110 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 350 ns |
| IGBT Type | PT |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| VCEsat-Max | 2.1 V |
| Height | 9.6mm |
| Length | 38.23mm |
| Width | 25.25mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
