Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2003 |
Series | BIMOSFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 140W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 140W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.7kV |
Max Collector Current | 20A |
Reverse Recovery Time | 360 ns |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.7kV |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Collector Emitter Saturation Voltage | 2.3V |
Turn On Time | 63 ns |
Test Condition | 1360V, 10A, 56 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 10A |
Turn Off Time-Nom (toff) | 1800 ns |
Gate Charge | 30nC |
Current - Collector Pulsed (Icm) | 40A |
Td (on/off) @ 25°C | 35ns/500ns |
Switching Energy | 6mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |