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IXBH12N300

IGBT 3000V 30A 160W TO247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXBH12N300
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 874
  • Description: IGBT 3000V 30A 160W TO247 (Kg)

Details

Tags

Parameters
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 30A
Reverse Recovery Time 1.4 μs
Collector Emitter Breakdown Voltage 3kV
Voltage - Collector Emitter Breakdown (Max) 3000V
Turn On Time 460 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 12A
Turn Off Time-Nom (toff) 705 ns
Gate Charge 62nC
Current - Collector Pulsed (Icm) 100A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series BIMOSFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 160W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 160W
See Relate Datesheet

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