Parameters | |
---|---|
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 3.2V |
Max Collector Current | 30A |
Reverse Recovery Time | 1.4 μs |
Collector Emitter Breakdown Voltage | 3kV |
Voltage - Collector Emitter Breakdown (Max) | 3000V |
Turn On Time | 460 ns |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 12A |
Turn Off Time-Nom (toff) | 705 ns |
Gate Charge | 62nC |
Current - Collector Pulsed (Icm) | 100A |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2009 |
Series | BIMOSFET™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 160W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 160W |