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IXBH24N170

IGBT 1700V 60A 250W TO247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXBH24N170
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 532
  • Description: IGBT 1700V 60A 250W TO247 (Kg)

Details

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Parameters
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 60A
Reverse Recovery Time 1.06 μs
Continuous Drain Current (ID) 3.2A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.7kV
Gate to Source Voltage (Vgs) 30V
Voltage - Collector Emitter Breakdown (Max) 1700V
Drain to Source Breakdown Voltage 500V
Turn On Time 190 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 24A
Drain to Source Resistance 1.4Ohm
Turn Off Time-Nom (toff) 1285 ns
Gate Charge 140nC
Current - Collector Pulsed (Icm) 230A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series BIMOSFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 38W
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Rise Time 28ns
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 26 ns
Turn-Off Delay Time 65 ns
See Relate Datesheet

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