IXBH42N170
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| Series | BIMOSFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.7kV |
| Max Power Dissipation | 360W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 75A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXB*42N170 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 360W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 45 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 35ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 365 ns |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Max Collector Current | 80A |
| Reverse Recovery Time | 1.32μs |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Turn On Time | 224 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 42A |
| Turn Off Time-Nom (toff) | 1070 ns |
| Gate Charge | 188nC |
| Current - Collector Pulsed (Icm) | 300A |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| Height | 21.46mm |
| Length | 16.26mm |
| Width | 5.3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
