Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Surface Mount | NO |
Transistor Element Material | SILICON |
Packaging | Bulk |
Published | 2011 |
Series | BIMOSFET™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 735W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) | 2500V |
Current - Collector (Ic) (Max) | 75A |
Power Dissipation-Max (Abs) | 735W |
Turn On Time | 632 ns |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 64A |
Turn Off Time-Nom (toff) | 397 ns |
Gate-Emitter Voltage-Max | 25V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |