Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2010 |
Series | BIMOSFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 500W |
Terminal Position | SINGLE |
Pin Count | 4 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | ISOLATED |
Input Type | Standard |
Power - Max | 500W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 3V |
Max Collector Current | 116A |
Reverse Recovery Time | 160 ns |
Collector Emitter Breakdown Voltage | 2.5kV |
Voltage - Collector Emitter Breakdown (Max) | 2500V |
Turn On Time | 632 ns |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 64A |
Turn Off Time-Nom (toff) | 397 ns |
Gate Charge | 400nC |
Current - Collector Pulsed (Icm) | 750A |
Gate-Emitter Voltage-Max | 25V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOPLUSi5-Pak™ |