Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Weight | 4.500005g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2000 |
Series | BIMOSFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW SWITCHING LOSSES |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.7kV |
Max Power Dissipation | 150W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 16A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 150W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 15 ns |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 220 ns |
Collector Emitter Voltage (VCEO) | 1.7kV |
Max Collector Current | 16A |
Reverse Recovery Time | 360 ns |
Collector Emitter Breakdown Voltage | 1.7kV |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Turn On Time | 43 ns |
Test Condition | 1360V, 10A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 10A |
Turn Off Time-Nom (toff) | 370 ns |
Gate Charge | 65nC |
Current - Collector Pulsed (Icm) | 40A |
Td (on/off) @ 25°C | 15ns/160ns |
Switching Energy | 1.2mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Fall Time-Max (tf) | 100ns |
Height | 5.1mm |
Length | 16.05mm |
Width | 14mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |