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IXBT16N170A

Trans IGBT Chip N-CH 1.7KV 16A 3-Pin(2+Tab) TO-268


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXBT16N170A
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 911
  • Description: Trans IGBT Chip N-CH 1.7KV 16A 3-Pin(2+Tab) TO-268 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Series BIMOSFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature LOW SWITCHING LOSSES
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.7kV
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 16A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 15 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 220 ns
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 16A
Reverse Recovery Time 360 ns
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 43 ns
Test Condition 1360V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 10A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 65nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 15ns/160ns
Switching Energy 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 100ns
Height 5.1mm
Length 16.05mm
Width 14mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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