Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2009 |
Series | BIMOSFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 32W |
Terminal Form | GULL WING |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 32W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.5kV |
Max Collector Current | 5A |
Reverse Recovery Time | 920 ns |
Collector Emitter Breakdown Voltage | 2.5kV |
Voltage - Collector Emitter Breakdown (Max) | 2500V |
Turn On Time | 310 ns |
Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 2A |
Turn Off Time-Nom (toff) | 252 ns |
Gate Charge | 10.6nC |
Current - Collector Pulsed (Icm) | 13A |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |