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IXBT42N170

IGBT 1700V 80A 360W TO268


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXBT42N170
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 718
  • Description: IGBT 1700V 80A 360W TO268 (Kg)

Details

Tags

Parameters
Max Power Dissipation 360W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXB*42N170
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 45 ns
Power - Max 360W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 560 ns
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 80A
Reverse Recovery Time 1.32 μs
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 2.3V
Turn On Time 224 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A
Turn Off Time-Nom (toff) 1070 ns
Gate Charge 188nC
Current - Collector Pulsed (Icm) 300A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series BIMOSFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
See Relate Datesheet

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