IXBT42N170A
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount, Through Hole |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | BIMOSFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | PURE TIN |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 357W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXB*42N170 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 357W |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Max Collector Current | 42A |
| Reverse Recovery Time | 330 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Collector Emitter Saturation Voltage | 5.2V |
| Max Breakdown Voltage | 1.7kV |
| Turn On Time | 63 ns |
| Test Condition | 850V, 21A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 21A |
| Turn Off Time-Nom (toff) | 420 ns |
| Gate Charge | 188nC |
| Current - Collector Pulsed (Icm) | 265A |
| Td (on/off) @ 25°C | 19ns/200ns |
| Switching Energy | 3.43mJ (on), 430μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
