IXBX64N250
| Parameters | |
|---|---|
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 735W |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 735W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.5kV |
| Max Collector Current | 156A |
| Reverse Recovery Time | 160 ns |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Turn On Time | 632 ns |
| Test Condition | 1250V, 128A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 64A |
| Turn Off Time-Nom (toff) | 397 ns |
| Gate Charge | 400nC |
| Current - Collector Pulsed (Icm) | 600A |
| Td (on/off) @ 25°C | 49ns/232ns |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Weight | 7.300002g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Series | BIMOSFET™ |
See Relate Datesheet
