IXBX75N170
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | BIMOSFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.04kW |
| Base Part Number | IXB*75N170 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 1040W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Max Collector Current | 200A |
| Reverse Recovery Time | 1.5 μs |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Turn On Time | 277 ns |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) | 840 ns |
| Gate Charge | 350nC |
| Current - Collector Pulsed (Icm) | 580A |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
