banner_page

IXBX75N170A

IGBT 1700V 110A 1040W PLUS247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXBX75N170A
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 950
  • Description: IGBT 1700V 110A 1040W PLUS247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series BIMOSFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.04kW
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXB*75N170
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 1040W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 6V
Max Collector Current 110A
Reverse Recovery Time 360 ns
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 65 ns
Test Condition 1360V, 42A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 42A
Turn Off Time-Nom (toff) 595 ns
Gate Charge 358nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 26ns/418ns
Switching Energy 3.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 110ns
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good