banner_page

IXDA20N120AS

IGBT 1200V 38A 200W TO263AB


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXDA20N120AS
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 642
  • Description: IGBT 1200V 38A 200W TO263AB (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.59999g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXD*20N120
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 34A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 38A
Collector Emitter Saturation Voltage 2.8V
Turn On Time 120 ns
Test Condition 600V, 20A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 450 ns
IGBT Type NPT
Gate Charge 70nC
Switching Energy 3.1mJ (on), 2.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good